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Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263 IRL3705NSTRLPBF

RS stock no.:: 217-2636
Mfr. Part No.:: IRL3705NSTRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263 IRL3705NSTRLPBF

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 297,84

(exc. VAT)

R 342,52

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

750 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 10	R 29.784	R 297.84
20 - 90	R 29.039	R 290.39
100 - 240	R 28.168	R 281.68
250 - 490	R 27.041	R 270.41
500 +	R 25.959	R 259.59

*price indicative

RS stock no.:: 217-2636
Mfr. Part No.:: IRL3705NSTRLPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	10mΩ
	Maximum Power Dissipation Pd	170W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	98nC
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	17.79mm
	Width	4.83 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 10mΩ
	Maximum Power Dissipation Pd 170W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 98nC
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 17.79mm
	Width 4.83 mm
	Automotive Standard No

Datasheet - IRL3705NSTRLPBF

The Infineon 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263 IRL3705NSTRLPBF

FREE delivery for orders over R 1,500.00

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