Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1
- RS stock no.:
- 217-2593
- Mfr. Part No.:
- IPZA60R180P7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 289,51
(exc. VAT)
R 332,935
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 210 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 57.902 | R 289.51 |
| 10 - 95 | R 56.454 | R 282.27 |
| 100 - 245 | R 54.76 | R 273.80 |
| 250 - 495 | R 52.57 | R 262.85 |
| 500 + | R 50.468 | R 252.34 |
*price indicative
- RS stock no.:
- 217-2593
- Mfr. Part No.:
- IPZA60R180P7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 72W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Height | 41.2mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 72W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Height 41.2mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R180P7SXKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252