Infineon IPP Type N-Channel MOSFET, 137 A, 100 V Enhancement, 3-Pin TO-220 IPP045N10N3GXKSA1

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Subtotal (1 pack of 10 units)*

R 391,09

(exc. VAT)

R 449,75

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 39.109R 391.09
20 - 90R 38.131R 381.31
100 - 240R 36.987R 369.87
250 - 490R 35.508R 355.08
500 +R 34.088R 340.88

*price indicative

Packaging Options:
RS stock no.:
217-2555
Mfr. Part No.:
IPP045N10N3GXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

100V

Series

IPP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

88nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.57 mm

Standards/Approvals

No

Height

29.95mm

Length

10.36mm

Distrelec Product Id

304-31-966

Automotive Standard

No

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Excellent switching performance World's lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

RoHS compliant-halogen free

MSL1 rated 2

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