Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1
- RS stock no.:
- 217-2538
- Mfr. Part No.:
- IPL60R125P7AUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 220,80
(exc. VAT)
R 253,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 44.16 | R 220.80 |
| 10 - 95 | R 43.056 | R 215.28 |
| 100 - 245 | R 41.764 | R 208.82 |
| 250 - 495 | R 40.094 | R 200.47 |
| 500 + | R 38.49 | R 192.45 |
*price indicative
- RS stock no.:
- 217-2538
- Mfr. Part No.:
- IPL60R125P7AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 111W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8.8 mm | |
| Height | 1.1mm | |
| Length | 8.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 111W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8.8 mm | ||
Height 1.1mm | ||
Length 8.8mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Suitable for hard and soft switching(PFC and LLC)due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
Better RDS(on)/package products compared to competition enabled by a
low RDS(on)*A(below1Ohm*mm²)
Fully qualified acc. JEDEC for Industrial Applications
Related links
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