Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
- RS stock no.:
- 217-2502
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 121,22
(exc. VAT)
R 139,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 400 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 6.061 | R 121.22 |
| 40 - 80 | R 5.909 | R 118.18 |
| 100 - 220 | R 5.732 | R 114.64 |
| 240 - 480 | R 5.502 | R 110.04 |
| 500 + | R 5.282 | R 105.64 |
*price indicative
- RS stock no.:
- 217-2502
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.1mm | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Height | 29.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.1mm | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Height 29.87mm | ||
Automotive Standard No | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
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