Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252 IRFR120ZTRPBF

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Subtotal (1 pack of 50 units)*

R 354,55

(exc. VAT)

R 407,75

(inc. VAT)

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Last RS stock
  • Final 8,450 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
50 - 50R 7.091R 354.55
100 - 100R 6.914R 345.70
150 - 200R 6.706R 335.30
250 - 450R 6.438R 321.90
500 +R 6.18R 309.00

*price indicative

Packaging Options:
RS stock no.:
215-2597
Mfr. Part No.:
IRFR120ZTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

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