Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- RS stock no.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 393,00
(exc. VAT)
R 452,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,900 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 7.86 | R 393.00 |
| 100 - 100 | R 7.663 | R 383.15 |
| 150 - 200 | R 7.433 | R 371.65 |
| 250 - 450 | R 7.136 | R 356.80 |
| 500 + | R 6.851 | R 342.55 |
*price indicative
- RS stock no.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 620mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 620mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
Related links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS138WH6433XTMA1