Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247 IPW65R125C7XKSA1
- RS stock no.:
- 214-9119
- Mfr. Part No.:
- IPW65R125C7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 493,19
(exc. VAT)
R 567,17
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 240 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 98.638 | R 493.19 |
| 10 - 95 | R 96.172 | R 480.86 |
| 100 - 245 | R 93.286 | R 466.43 |
| 250 - 495 | R 89.554 | R 447.77 |
| 500 + | R 85.972 | R 429.86 |
*price indicative
- RS stock no.:
- 214-9119
- Mfr. Part No.:
- IPW65R125C7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 101W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 101W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Related links
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247