Infineon CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-247 IPW60R125CFD7XKSA1

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Subtotal (1 pack of 5 units)*

R 402,68

(exc. VAT)

R 463,08

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 80.536R 402.68
10 - 95R 78.522R 392.61
100 - 245R 76.166R 380.83
250 - 495R 73.12R 365.60
500 +R 70.196R 350.98

*price indicative

Packaging Options:
RS stock no.:
214-9115
Mfr. Part No.:
IPW60R125CFD7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CFD7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

92W

Length

16.13mm

Standards/Approvals

No

Height

21.1mm

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

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