Infineon CoolMOS CFD7 Type N-Channel MOSFET, 16 A, 600 V Enhancement, 5-Pin VSON
- RS stock no.:
- 214-9071
- Mfr. Part No.:
- IPL60R160CFD7AUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 58 221,00
(exc. VAT)
R 66 954,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 19.407 | R 58,221.00 |
| 6000 - 6000 | R 18.921 | R 56,763.00 |
| 9000 + | R 18.354 | R 55,062.00 |
*price indicative
- RS stock no.:
- 214-9071
- Mfr. Part No.:
- IPL60R160CFD7AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS CFD7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 95W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS CFD7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 95W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Height 1.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
Related links
- Infineon CoolMOS™ CFD7 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R160CFD7AUMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R180P6AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R104C7AUMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R210P6AUMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R105P7AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 5-Pin ThinkPAK 8 x 8 IPL65R130C7AUMA1
- Infineon CoolMOS™ N-Channel MOSFET Transistor & Diode 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R095CFD7AUMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R185C7AUMA1