Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 214-9050
- Mfr. Part No.:
- IPD80R3K3P7ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 10 835,00
(exc. VAT)
R 12 460,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 4.334 | R 10,835.00 |
| 5000 - 5000 | R 4.225 | R 10,562.50 |
| 7500 + | R 4.098 | R 10,245.00 |
*price indicative
- RS stock no.:
- 214-9050
- Mfr. Part No.:
- IPD80R3K3P7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 18W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 18W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.
It comes with Fully optimized portfolio
Integrated Zener Diode ESD protection
Related links
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R3K3P7ATMA1
- Infineon CoolMOS™ N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R3K3P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R2K0P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R900P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R750P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R600P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R2K4P7ATMA1