Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-220 IPP80R280P7XKSA1
- RS stock no.:
- 214-4420
- Mfr. Part No.:
- IPP80R280P7XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 106,23
(exc. VAT)
R 122,165
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 45 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 21.246 | R 106.23 |
| 10 - 95 | R 20.714 | R 103.57 |
| 100 - 245 | R 20.092 | R 100.46 |
| 250 - 495 | R 19.288 | R 96.44 |
| 500 + | R 18.516 | R 92.58 |
*price indicative
- RS stock no.:
- 214-4420
- Mfr. Part No.:
- IPP80R280P7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 101W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 101W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Related links
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