Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1
- RS stock no.:
- 214-4402
- Mfr. Part No.:
- IPN80R1K4P7ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 20 units)*
R 241,44
(exc. VAT)
R 277,66
(inc. VAT)
Add 140 units to get free delivery
In Stock
- 2,140 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 12.072 | R 241.44 |
| 40 - 80 | R 11.77 | R 235.40 |
| 100 - 220 | R 11.417 | R 228.34 |
| 240 - 480 | R 10.96 | R 219.20 |
| 500 + | R 10.522 | R 210.44 |
*price indicative
- RS stock no.:
- 214-4402
- Mfr. Part No.:
- IPN80R1K4P7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Related links
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