Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R365P7AUMA1

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Subtotal (1 pack of 10 units)*

R 227,24

(exc. VAT)

R 261,33

(inc. VAT)

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  • 2,780 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10R 22.724R 227.24
20 - 90R 22.156R 221.56
100 - 240R 21.491R 214.91
250 - 490R 20.631R 206.31
500 +R 19.806R 198.06

*price indicative

Packaging Options:
RS stock no.:
214-4400
Mfr. Part No.:
IPL60R365P7AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

365mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

46W

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Length

8.1mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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