DiodesZetex DMN61D9U Type N-Channel MOSFET, 380 mA, 60 V Enhancement, 3-Pin SOT-23 DMN61D9UT-7
- RS stock no.:
- 213-9193
- Mfr. Part No.:
- DMN61D9UT-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 200 units)*
R 580,40
(exc. VAT)
R 667,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 200 | R 2.902 | R 580.40 |
| 400 - 600 | R 2.83 | R 566.00 |
| 800 - 1000 | R 2.745 | R 549.00 |
| 1200 + | R 2.635 | R 527.00 |
*price indicative
- RS stock no.:
- 213-9193
- Mfr. Part No.:
- DMN61D9UT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 380mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN61D9U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 540mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 380mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN61D9U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 540mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN61D9U series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
Low input capacitance
Fast switching speed
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