Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 145,91

(exc. VAT)

R 167,80

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 6,090 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 10R 14.591R 145.91
20 - 90R 14.226R 142.26
100 - 490R 13.799R 137.99
500 - 990R 13.247R 132.47
1000 +R 12.717R 127.17

*price indicative

Packaging Options:
RS stock no.:
210-5011
Mfr. Part No.:
SiSS30ADN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS30ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.5nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

3.4 mm

Length

3.4mm

Standards/Approvals

No

Height

0.83mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Related links