Vishay SiSS30ADN N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3
- RS stock no.:
- 210-5011
- Mfr. Part No.:
- SiSS30ADN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 139,61
(exc. VAT)
R 160,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,090 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 13.961 | R 139.61 |
| 20 - 90 | R 13.612 | R 136.12 |
| 100 - 490 | R 13.204 | R 132.04 |
| 500 - 990 | R 12.676 | R 126.76 |
| 1000 + | R 12.169 | R 121.69 |
*price indicative
- RS stock no.:
- 210-5011
- Mfr. Part No.:
- SiSS30ADN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS30ADN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 0.83mm | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212 | ||
Series SiSS30ADN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 0.83mm | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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