Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 141,90

(exc. VAT)

R 163,20

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 14.19R 141.90
20 - 90R 13.835R 138.35
100 - 490R 13.42R 134.20
500 - 990R 12.883R 128.83
1000 +R 12.368R 123.68

*price indicative

Packaging Options:
RS stock no.:
210-5011
Mfr. Part No.:
SiSS30ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Series

SiSS30ADN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Height

0.83mm

Width

3.4 mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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