Vishay E Type N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 332,46

(exc. VAT)

R 382,33

(inc. VAT)

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Last RS stock
  • Final 925 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
5 - 5R 66.492R 332.46
10 - 95R 64.83R 324.15
100 - 245R 62.886R 314.43
250 - 495R 60.37R 301.85
500 +R 57.956R 289.78

*price indicative

Packaging Options:
RS stock no.:
210-4965
Mfr. Part No.:
SIHA21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

33W

Maximum Operating Temperature

150°C

Height

4.3mm

Length

28.1mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7.5 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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