Vishay E N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 SIHA17N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 87,62

(exc. VAT)

R 100,76

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 17.524R 87.62
10 - 95R 17.086R 85.43
100 - 495R 16.574R 82.87
500 - 995R 15.912R 79.56
1000 +R 15.276R 76.38

*price indicative

Packaging Options:
RS stock no.:
210-4961
Mfr. Part No.:
SIHA17N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

62nC

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

34W

Maximum Operating Temperature

150°C

Height

4.3mm

Standards/Approvals

No

Width

9.7mm

Length

28.1mm

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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