onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263
- RS stock no.:
- 205-2495
- Mfr. Part No.:
- NTBS9D0N10MC
- Manufacturer:
- onsemi
Image representative of range
Subtotal (1 reel of 800 units)*
R 14 640,00
(exc. VAT)
R 16 832,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 800 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | R 18.30 | R 14,640.00 |
*price indicative
- RS stock no.:
- 205-2495
- Mfr. Part No.:
- NTBS9D0N10MC
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.6 mm | |
| Length | 14.6mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 9.6 mm | ||
Length 14.6mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 60A
Drain to source on resistance rating is 9.0mohm
Low RDS(on) to minimize conduction losses
Optimized switching performance
Low QG and capacitance to minimize driver losses
Industry’s lowest Qrr and softest body-diode for superior low noise switching
Lowers switching noise/EMI
High efficiency with lower switching spike and EMI
Package type is D2PAK3
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