STMicroelectronics Type N-Channel SiC Power Module, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCTH50N120-7
- RS stock no.:
- 204-3954P
- Mfr. Part No.:
- SCTH50N120-7
- Manufacturer:
- STMicroelectronics
Image representative of range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 204-3954P
- Mfr. Part No.:
- SCTH50N120-7
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | Enhancement | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode Enhancement | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Low capacitance