MPN

onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1

RS stock no.:: 202-5731
Mfr. Part No.:: NVBG040N120SC1
Manufacturer:: onsemi

onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1

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Bulk discount available

Subtotal (1 pack of 2 units)*

R 913,95

(exc. VAT)

R 1 051,042

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

652 left, ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 48	R 456.975	R 913.95
50 - 198	R 445.55	R 891.10
200 - 398	R 432.185	R 864.37
400 +	R 414.90	R 829.80

*price indicative

RS stock no.:: 202-5731
Mfr. Part No.:: NVBG040N120SC1
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1200V
	Series	NVB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	106nC
	Maximum Power Dissipation Pd	178W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Width	4.7 mm
	Height	15.7mm
	Standards/Approvals	AEC-Q101
	Length	10.2mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1200V
	Series NVB
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 106nC
	Maximum Power Dissipation Pd 178W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Width 4.7 mm
	Height 15.7mm
	Standards/Approvals AEC-Q101
	Length 10.2mm
	Automotive Standard No

Datasheet - NVBG040N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1

FREE delivery for orders over R 1,500.00

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L

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