onsemi NTMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK NTMYS5D3N04CTWG
- RS stock no.:
- 195-2521
- Mfr. Part No.:
- NTMYS5D3N04CTWG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 511,05
(exc. VAT)
R 587,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 1,225 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 20.442 | R 511.05 |
| 100 - 475 | R 19.931 | R 498.28 |
| 500 - 975 | R 19.333 | R 483.33 |
| 1000 - 1475 | R 18.56 | R 464.00 |
| 1500 + | R 17.818 | R 445.45 |
*price indicative
- RS stock no.:
- 195-2521
- Mfr. Part No.:
- NTMYS5D3N04CTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS5D3N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.15mm | |
| Width | 4.25 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS5D3N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.15mm | ||
Width 4.25 mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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