STMicroelectronics STD5N Type N-Channel MOSFET, 3.5 A, 600 V Enhancement, 3-Pin TO-252 STD5N60DM2
- RS stock no.:
- 193-5390
- Mfr. Part No.:
- STD5N60DM2
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 242,40
(exc. VAT)
R 278,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 24 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.696 | R 242.40 |
| 50 - 75 | R 9.454 | R 236.35 |
| 100 - 225 | R 9.17 | R 229.25 |
| 250 - 975 | R 8.803 | R 220.08 |
| 1000 + | R 8.451 | R 211.28 |
*price indicative
- RS stock no.:
- 193-5390
- Mfr. Part No.:
- STD5N60DM2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STD5N | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.55Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.2mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STD5N | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.55Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.2mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
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