STMicroelectronics Type N-Channel MOSFET, 5.5 A, 600 V Enhancement, 8-Pin PowerFLAT STL10N60M6
- RS stock no.:
- 192-4825
- Mfr. Part No.:
- STL10N60M6
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 193,02
(exc. VAT)
R 221,975
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 38.604 | R 193.02 |
| 50 - 95 | R 37.638 | R 188.19 |
| 100 - 245 | R 36.508 | R 182.54 |
| 250 - 995 | R 35.048 | R 175.24 |
| 1000 + | R 33.646 | R 168.23 |
*price indicative
- RS stock no.:
- 192-4825
- Mfr. Part No.:
- STL10N60M6
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 660mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Length | 6mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 660mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Length 6mm | ||
Width 5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
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