Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263 C3M0075120J

Image representative of range

Subtotal (1 tube of 50 units)*

R 14 059,55

(exc. VAT)

R 16 168,50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 50 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 +R 281.191R 14,059.55

*price indicative

RS stock no.:
192-3373
Mfr. Part No.:
C3M0075120J
Manufacturer:
Wolfspeed
Find similar products by selecting one or more attributes.
Select all

Brand

Wolfspeed

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263

Series

C3M

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Forward Voltage Vf

4.5V

Typical Gate Charge Qg @ Vgs

48nC

Maximum Gate Source Voltage Vgs

19 V

Maximum Power Dissipation Pd

113.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.23mm

Height

4.57mm

Width

9.12 mm

Standards/Approvals

No

Automotive Standard

No

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.

Minimum of 1200V Vbr across entire operating temperature range

New low-impedance package with driver source

> 7mm of creepage/clearance between drain and source

High-speed switching with low output capacitance

High blocking voltage with low RDS(on)

Fast intrinsic diode with low reverse recovery (Qrr)

Easy to parallel and simple to drive

Related links