STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4
- RS stock no.:
- 188-8461
- Mfr. Part No.:
- STB11NM80T4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 280,73
(exc. VAT)
R 322,84
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 140.365 | R 280.73 |
| 50 - 98 | R 136.855 | R 273.71 |
| 100 - 248 | R 132.75 | R 265.50 |
| 250 - 498 | R 127.44 | R 254.88 |
| 500 + | R 122.34 | R 244.68 |
*price indicative
- RS stock no.:
- 188-8461
- Mfr. Part No.:
- STB11NM80T4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MDmesh Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | STB11NM80 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 0.86V | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.37mm | |
| Width | 9.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MDmesh Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series STB11NM80 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 0.86V | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.37mm | ||
Width 9.35 mm | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications
Related links
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