Vishay SiS128LDN Type N-Channel MOSFET, 33.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiS128LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 166,83

(exc. VAT)

R 191,85

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 16.683R 166.83
50 - 90R 16.266R 162.66
100 - 490R 15.778R 157.78
500 - 990R 15.147R 151.47
1000 +R 14.541R 145.41

*price indicative

Packaging Options:
RS stock no.:
188-5153
Mfr. Part No.:
SiS128LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33.7A

Maximum Drain Source Voltage Vds

80V

Series

SiS128LDN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.15mm

Height

1.07mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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