Vishay SiS128LDN Type N-Channel MOSFET, 33.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiS128LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 162,47

(exc. VAT)

R 186,84

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 16.247R 162.47
50 - 90R 15.841R 158.41
100 - 490R 15.366R 153.66
500 - 990R 14.751R 147.51
1000 +R 14.161R 141.61

*price indicative

Packaging Options:
RS stock no.:
188-5153
Mfr. Part No.:
SiS128LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33.7A

Maximum Drain Source Voltage Vds

80V

Series

SiS128LDN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.15mm

Height

1.07mm

Width

3.15 mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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