Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8 SIRA99DP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 255,46

(exc. VAT)

R 293,78

(inc. VAT)

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Being discontinued
  • Final 1,560 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 20R 51.092R 255.46
25 - 95R 49.814R 249.07
100 - 495R 48.32R 241.60
500 +R 46.388R 231.94

*price indicative

Packaging Options:
RS stock no.:
188-5097
Mfr. Part No.:
SIRA99DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SiRA99DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

172.5nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

150°C

Height

1.07mm

Standards/Approvals

No

Length

5.99mm

Width

5 mm

Automotive Standard

No

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Very low RDS(on) minimizes voltage drop and reduces conduction loss

Eliminates the need for charge pump

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