Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3
- RS stock no.:
- 188-5094
- Distrelec Article No.:
- 304-32-536
- Mfr. Part No.:
- SISS60DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 240,34
(exc. VAT)
R 276,39
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 07 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 24.034 | R 240.34 |
| 50 - 90 | R 23.433 | R 234.33 |
| 100 - 490 | R 22.73 | R 227.30 |
| 500 - 990 | R 21.821 | R 218.21 |
| 1000 + | R 20.948 | R 209.48 |
*price indicative
- RS stock no.:
- 188-5094
- Distrelec Article No.:
- 304-32-536
- Mfr. Part No.:
- SISS60DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 181.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSS60DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.01mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.68V | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 181.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSS60DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.01mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.68V | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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