Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 223,32

(exc. VAT)

R 256,82

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40R 22.332R 223.32
50 - 90R 21.774R 217.74
100 - 490R 21.121R 211.21
500 - 990R 20.276R 202.76
1000 +R 19.465R 194.65

*price indicative

Packaging Options:
RS stock no.:
188-5094
Distrelec Article No.:
304-32-536
Mfr. Part No.:
SISS60DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS60DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.68V

Typical Gate Charge Qg @ Vgs

57nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.8W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Width

3.3 mm

Length

3.3mm

Height

0.78mm

Standards/Approvals

No

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

Related links