Vishay SiSS30LDN Type N-Channel MOSFET, 55.5 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SISS30LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 218,86

(exc. VAT)

R 251,69

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 21.886R 218.86
50 - 90R 21.339R 213.39
100 - 490R 20.699R 206.99
500 - 990R 19.871R 198.71
1000 +R 19.076R 190.76

*price indicative

Packaging Options:
RS stock no.:
188-5051
Mfr. Part No.:
SISS30LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.5A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS30LDN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32.5nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.3 mm

Length

3.3mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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