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    N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SISS26LDN-T1-GE3

    View all MOSFETs
    Bulk discount available

    Subtotal (1 pack of 10 units)**

    R  193 28

    (exc. VAT)

    R  222 27

    (inc. VAT)

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    On back order for despatch 2025/05/23*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Pack**
    10 - 40R 19,328R 193,28
    50 - 90R 18,845R 188,45
    100 - 490R 18,28R 182,80
    500 - 990R 17,549R 175,49
    1000 +R 16,847R 168,47

    **price indicative

    Packaging Options:
    RS stock no.:
    188-5033
    Mfr. Part No.:
    SISS26LDN-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    81.2 A

    Maximum Drain Source Voltage

    60 V

    Package Type

    PowerPAK 1212-8S

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    6.2 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.5V

    Minimum Gate Threshold Voltage

    1V

    Maximum Power Dissipation

    57 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    ±20 V

    Length

    3.3mm

    Maximum Operating Temperature

    +150 °C

    Typical Gate Charge @ Vgs

    31.5 nC @ 10 V

    Number of Elements per Chip

    1

    Width

    3.3mm

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    1.1V

    Height

    0.78mm

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