Vishay SQM50034E Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-263 SQM50034E_GE3
- RS stock no.:
- 188-5022
- Mfr. Part No.:
- SQM50034E_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 283,47
(exc. VAT)
R 325,99
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 56.694 | R 283.47 |
| 25 - 45 | R 55.276 | R 276.38 |
| 50 - 95 | R 53.618 | R 268.09 |
| 100 - 245 | R 51.474 | R 257.37 |
| 250 + | R 49.416 | R 247.08 |
*price indicative
- RS stock no.:
- 188-5022
- Mfr. Part No.:
- SQM50034E_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SQM50034E | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0039Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 9.65 mm | |
| Length | 10.41mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SQM50034E | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0039Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 9.65 mm | ||
Length 10.41mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 60 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Package with low thermal resistance
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