Vishay SiSHA12ADN Type N-Channel MOSFET, 25 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSHA12ADN-T1-GE3

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Subtotal (1 pack of 25 units)*

R 295,00

(exc. VAT)

R 339,25

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 11.80R 295.00
50 - 75R 11.505R 287.63
100 - 475R 11.16R 279.00
500 - 975R 10.713R 267.83
1000 +R 10.285R 257.13

*price indicative

Packaging Options:
RS stock no.:
188-4936
Mfr. Part No.:
SiSHA12ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSHA12ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

28W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.93mm

Width

3.3 mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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