MPN

Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

RS stock no.:: 188-4872
Mfr. Part No.:: SIHB22N60EF-GE3
Manufacturer:: Vishay

Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

Image representative of range

Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 533,35

(exc. VAT)

R 1 763,35

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	R 30.667	R 1,533.35
100 - 200	R 29.90	R 1,495.00
250 - 450	R 29.003	R 1,450.15
500 - 950	R 27.843	R 1,392.15
1000 +	R 26.729	R 1,336.45

*price indicative

RS stock no.:: 188-4872
Mfr. Part No.:: SIHB22N60EF-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SiHB22N60EF
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	182mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	48nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.41mm
	Width	9.65 mm
	Height	4.57mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SiHB22N60EF
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 182mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 48nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.41mm
	Width 9.65 mm
	Height 4.57mm
	Automotive Standard No

Datasheet SIHB22N60EF-GE3

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

FREE delivery for orders over R 1,500.00

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