onsemi NVMTS0D4N04CL Type N-Channel MOSFET, 553.8 A, 40 V Enhancement, 8-Pin DFN NVMTS0D4N04CLTXG
- RS stock no.:
- 186-1334
- Mfr. Part No.:
- NVMTS0D4N04CLTXG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 376,41
(exc. VAT)
R 432,872
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,634 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 188.205 | R 376.41 |
| 20 - 198 | R 183.50 | R 367.00 |
| 200 - 498 | R 177.995 | R 355.99 |
| 500 - 998 | R 170.875 | R 341.75 |
| 1000 + | R 164.04 | R 328.08 |
*price indicative
- RS stock no.:
- 186-1334
- Mfr. Part No.:
- NVMTS0D4N04CLTXG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 553.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMTS0D4N04CL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 640μΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 163nC | |
| Maximum Power Dissipation Pd | 244W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Length | 8.1mm | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 553.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMTS0D4N04CL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 640μΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 163nC | ||
Maximum Power Dissipation Pd 244W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Length 8.1mm | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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