Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3
- RS stock no.:
- 180-7909
- Mfr. Part No.:
- SIS412DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 153,22
(exc. VAT)
R 176,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,480 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 7.661 | R 153.22 |
| 40 - 80 | R 7.469 | R 149.38 |
| 100 - 480 | R 7.245 | R 144.90 |
| 500 - 980 | R 6.955 | R 139.10 |
| 1000 + | R 6.677 | R 133.54 |
*price indicative
- RS stock no.:
- 180-7909
- Mfr. Part No.:
- SIS412DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.79mm | |
| Width | 3.61 mm | |
| Length | 3.61mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.79mm | ||
Width 3.61 mm | ||
Length 3.61mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 15.6W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Load switches
• Notebook PCs
• System power
Related links
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4608LDN-T1-GE3