onsemi NVMFS5C426NL Type N-Channel MOSFET, 237 A, 40 V Enhancement, 5-Pin DFN NVMFS5C426NLT1G
- RS stock no.:
- 178-4606
- Mfr. Part No.:
- NVMFS5C426NLT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 429,03
(exc. VAT)
R 493,38
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,380 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 42.903 | R 429.03 |
| 100 - 240 | R 41.83 | R 418.30 |
| 250 - 490 | R 40.575 | R 405.75 |
| 500 - 990 | R 38.952 | R 389.52 |
| 1000 + | R 37.394 | R 373.94 |
*price indicative
- RS stock no.:
- 178-4606
- Mfr. Part No.:
- NVMFS5C426NLT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFS5C426NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 128W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFS5C426NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 128W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver losses
Enhanced Optical Inspection
Applications
Reverse Battery Protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver - ABS, Fuel Injection
Motor Control - EPS, Wipers, Fans, Seats, etc.
Load Switch - ECU, Chassis, body
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