Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3
- RS stock no.:
- 178-3962P
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
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R 807,70
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R 928,90
(inc. VAT)
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Units | Per unit |
|---|---|
| 100 - 475 | R 8.077 |
| 500 - 975 | R 7.834 |
| 1000 + | R 7.521 |
*price indicative
- RS stock no.:
- 178-3962P
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212 | |
| Series | SiS110DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Power Dissipation Pd | 24W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Width | 3.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212 | ||
Series SiS110DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Power Dissipation Pd 24W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Width 3.15mm | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- CN
Vishay Siliconix SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3
This n-channel MOSFET is a surface-mount switching transistor designed for power conversion and control applications in industrial systems. It operates as an enhancement-mode device capable of handling moderate to high voltages and currents, providing efficient switching in Compact surface-mount assemblies.
Features and Benefits:
• 100V drain-source rating enables high-voltage switching applications • 14.2A continuous drain current supports substantial load currents • 70mΩ Rds(on) minimises conduction losses during operation • 8.5nC gate charge reduces switching energy and drive requirements • 24W power dissipation manages thermal load in confined layouts • 150°C maximum junction temperature allows elevated operating conditions
Applications
• Suitable for DC-DC converter switching stages in automation equipment • Ideal for motor-drive half-bridge circuits in factory systems • Used for power management in industrial control units • Can be used for load switching in electrical distribution modules
What mounting style does it require for assembly?
It is supplied in a Compact PowerPAK 1212 surface-mount package designed for soldered PCB assembly and low-profile board layouts.
How wide a temperature range can it tolerate in service?
It is rated for operation from -55°C ambient to a 150°C maximum junction temperature, permitting use in environments with substantial thermal variation.
What gate voltage limits should designers observe?
The device permits gate-source voltages up to 20V
designs should ensure the gate drive stays within this constraint to protect the gate oxide.
How many pins does the package present for circuit integration?
The package includes eight pins to accommodate drain, source and gate connections and to aid thermal and electrical routing on the PCB.
Is this part specified for automotive use?
It is not designated to automotive standards and should not be chosen where automotive-grade qualification is mandatory.