Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G

RS stock no.:: 177-9737
Mfr. Part No.:: VP2450N8-G
Manufacturer:: Microchip

Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 171,31

(exc. VAT)

R 197,005

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,920 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 5	R 34.262	R 171.31
10 - 45	R 33.406	R 167.03
50 - 95	R 32.404	R 162.02
100 +	R 31.108	R 155.54

*price indicative

RS stock no.:: 177-9737
Mfr. Part No.:: VP2450N8-G
Manufacturer:: Microchip

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	160mA
	Maximum Drain Source Voltage Vds	500V
	Package Type	SOT-89
	Series	VP2450
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	35Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.8V
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	2.6 mm
	Length	4.6mm
	Height	1.6mm
	Automotive Standard	No

	Select all
	Brand Microchip
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 160mA
	Maximum Drain Source Voltage Vds 500V
	Package Type SOT-89
	Series VP2450
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 35Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.8V
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 2.6 mm
	Length 4.6mm
	Height 1.6mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G

FREE delivery for orders over R 1,500.00

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