Microchip TN2540 Type N-Channel MOSFET, 260 mA, 400 V Enhancement, 3-Pin TO-243
- RS stock no.:
- 177-9693
- Mfr. Part No.:
- TN2540N8-G
- Manufacturer:
- Microchip
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Subtotal (1 reel of 2000 units)*
R 43 210,00
(exc. VAT)
R 49 692,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- Shipping from 03 February 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | R 21.605 | R 43,210.00 |
*price indicative
- RS stock no.:
- 177-9693
- Mfr. Part No.:
- TN2540N8-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | TN2540 | |
| Package Type | TO-243 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Width | 2.6 mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Series TN2540 | ||
Package Type TO-243 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Width 2.6 mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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