Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1
- RS stock no.:
- 171-1963
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 179,43
(exc. VAT)
R 206,34
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 17.943 | R 179.43 |
| 50 - 90 | R 17.494 | R 174.94 |
| 100 - 240 | R 16.969 | R 169.69 |
| 250 - 490 | R 16.29 | R 162.90 |
| 500 + | R 15.638 | R 156.38 |
*price indicative
- RS stock no.:
- 171-1963
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC070N10NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC070N10NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon BSC070N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL. This MOSFET is optimized for synchronous rectification and Ideal for high switching frequency. This MOSFET have highest system efficiency and reduced switching and conduction losses.
Optimized for high performance SMPS
100% avalanche tested
Superior thermal resistance
N-channel
Related links
- Infineon BSC070N10NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1
- Infineon BSC030N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon BSC040N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON