N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
- RS stock no.:
- 169-6089
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
Subtotal (1 reel of 3000 units)**
R 7 173 00
(exc. VAT)
R 8 250 00
(inc. VAT)
3000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 + | R 2,391 | R 7 173,00 |
**price indicative
- RS stock no.:
- 169-6089
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 480 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 280 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 2.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Typical Gate Charge @ Vgs | 0.86 nC @ 10 V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 480 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 280 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 2.2mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.35mm | ||
Typical Gate Charge @ Vgs 0.86 nC @ 10 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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