onsemi UltraFET Type N-Channel MOSFET, 3 A, 250 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

R 47 815,00

(exc. VAT)

R 54 987,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +R 19.126R 47,815.00

*price indicative

RS stock no.:
166-2645
Mfr. Part No.:
FDS2734
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

250V

Package Type

SOIC

Series

UltraFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

225mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Operating Temperature

150°C

Height

1.5mm

Length

4mm

Width

5 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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