Infineon HEXFET P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC IRF6216PBF

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS stock no.:
165-7563
Mfr. Part No.:
IRF6216PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

4mm

Length

5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

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