N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXYS IXTH12N65X2
- RS stock no.:
- 146-1786
- Mfr. Part No.:
- IXTH12N65X2
- Manufacturer:
- IXYS
Subtotal (1 tube of 30 units)**
R 2 771 67
(exc. VAT)
R 3 187 41
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Tube** |
|---|---|---|
| 30 + | R 92,389 | R 2 771,67 |
**price indicative
- RS stock no.:
- 146-1786
- Mfr. Part No.:
- IXTH12N65X2
- Manufacturer:
- IXYS
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | X2-Class | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 180 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 21.45mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.24mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 17.7 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.3mm | |
| Forward Diode Voltage | 1.4V | |
Select all | ||
|---|---|---|
Manufacturer IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series X2-Class | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 180 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 21.45mm | ||
Maximum Operating Temperature +150 °C | ||
Length 16.24mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 17.7 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 5.3mm | ||
Forward Diode Voltage 1.4V | ||
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