N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXYS IXFQ34N50P3

RS stock no.:: 146-1753
Mfr. Part No.:: IXFQ34N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXYS IXFQ34N50P3

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Discontinued product

RS stock no.:: 146-1753
Mfr. Part No.:: IXFQ34N50P3
Manufacturer:: IXYS

IXFQ34N50P3, IXFH34N50P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	34 A
Maximum Drain Source Voltage	500 V
Package Type	TO-3PN
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	175 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	695 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.9mm
Length	15.8mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	60 nC @ 10 V
Height	20.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXYS IXFQ34N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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