Vishay N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SIR158DP-T1-RE3
- RS stock no.:
- 134-9718
- Mfr. Part No.:
- SIR158DP-T1-RE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
R 66,67
(exc. VAT)
R 76,67
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 195 | R 13.334 | R 66.67 |
| 200 - 395 | R 13.00 | R 65.00 |
| 400 - 745 | R 12.61 | R 63.05 |
| 750 + | R 12.106 | R 60.53 |
*price indicative
- RS stock no.:
- 134-9718
- Mfr. Part No.:
- SIR158DP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 87 nC @ 10 V | |
| Length | 6.25mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.26mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.12mm | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 87 nC @ 10 V | ||
Length 6.25mm | ||
Number of Elements per Chip 1 | ||
Width 5.26mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.12mm | ||
Forward Diode Voltage 1.1V | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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