DiodesZetex DMN2011UFDF Type N-Channel MOSFET, 14.2 A, 20 V Enhancement, 6-Pin UDFN DMN2011UFDF-7
- RS stock no.:
- 133-3344
- Mfr. Part No.:
- DMN2011UFDF-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 147,10
(exc. VAT)
R 169,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 21 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 7.355 | R 147.10 |
| 100 - 480 | R 7.171 | R 143.42 |
| 500 - 980 | R 6.956 | R 139.12 |
| 1000 - 2980 | R 6.678 | R 133.56 |
| 3000 + | R 6.411 | R 128.22 |
*price indicative
- RS stock no.:
- 133-3344
- Mfr. Part No.:
- DMN2011UFDF-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2011UFDF | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Standards/Approvals | No | |
| Height | 0.58mm | |
| Width | 2.05 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2011UFDF | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Standards/Approvals No | ||
Height 0.58mm | ||
Width 2.05 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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