Infineon HEXFET Type P-Channel MOSFET, 5.4 A, 30 V Enhancement, 8-Pin SOIC IRF9335TRPBF
- RS stock no.:
- 130-0969
- Mfr. Part No.:
- IRF9335TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 222,65
(exc. VAT)
R 256,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 3,775 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 8.906 | R 222.65 |
| 125 - 475 | R 8.683 | R 217.08 |
| 500 - 975 | R 8.423 | R 210.58 |
| 1000 - 2475 | R 8.086 | R 202.15 |
| 2500 + | R 7.762 | R 194.05 |
*price indicative
- RS stock no.:
- 130-0969
- Mfr. Part No.:
- IRF9335TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET P-Channel MOSFET 30 V, 8-Pin SOIC IRF9335TRPBF
- Diodes Inc Dual N/P-Channel MOSFET 6.4 A 8-Pin SOIC ZXMC3A16DN8TA
- Diodes Inc N/P-Channel MOSFET 10 A 20 V, 8-Pin PowerDI5060-8 DMC1018UPDWQ-13
- Infineon HEXFET P-Channel MOSFET 30 V, 8-Pin SOIC IRF9310TRPBF
- Infineon HEXFET P-Channel MOSFET 150 V, 8-Pin SOIC IRF6216PBF
- Infineon HEXFET P-Channel MOSFET 30 V, 8-Pin SOIC IRF9317TRPBF
- Infineon HEXFET P-Channel MOSFET 40 V, 8-Pin SOIC IRF7240TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 8-Pin SOIC IRF9321TRPBF