Infineon HEXFET Type P-Channel MOSFET, 5.4 A, 30 V Enhancement, 8-Pin SOIC IRF9335TRPBF

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Subtotal (1 pack of 25 units)*

R 217,30

(exc. VAT)

R 249,90

(inc. VAT)

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Last RS stock
  • Final 3,725 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
25 - 100R 8.692R 217.30
125 - 475R 8.475R 211.88
500 - 975R 8.221R 205.53
1000 - 2475R 7.892R 197.30
2500 +R 7.576R 189.40

*price indicative

Packaging Options:
RS stock no.:
130-0969
Mfr. Part No.:
IRF9335TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.4A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

9.1nC

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Height

1.5mm

Automotive Standard

No

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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