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    N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1

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    Bulk discount available

    Subtotal (1 pack of 2 units)**

    R  44 98

    (exc. VAT)

    R  51 72

    (inc. VAT)

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    898 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Pack**
    2 - 8R 22,49R 44,98
    10 - 98R 21,93R 43,86
    100 - 498R 21,27R 42,54
    500 - 998R 20,42R 40,84
    1000 +R 19,605R 39,21

    **price indicative

    Packaging Options:
    RS stock no.:
    130-0894
    Mfr. Part No.:
    IPB60R160P6ATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    23.8 A

    Maximum Drain Source Voltage

    650 V

    Series

    CoolMOS™ P6

    Package Type

    D2PAK (TO-263)

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    160 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4.5V

    Minimum Gate Threshold Voltage

    3.5V

    Maximum Power Dissipation

    176 W

    Maximum Gate Source Voltage

    -30 V, +30 V

    Width

    4.57mm

    Number of Elements per Chip

    1

    Length

    10.31mm

    Maximum Operating Temperature

    +150 °C

    Typical Gate Charge @ Vgs

    44 nC @ 10 V

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    0.9V

    Height

    9.45mm

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